Strain-induced large injection current in twisted bilayer graphene

The electronic wave functions in moir\'e materials are highly sensitive to the details of local atomic configuration enabling Bloch band geometry and topology be controlled by stacking strain. Here, we predict that large injection currents (under circularly polarized irradiation) can develop strained twisted bilayer graphene (TBG) heterostructures with broken sublattice symmetry; such bulk photovoltaic flow even absence a $p\text{\ensuremath{-}}n$ junction helicity incident light. As argue, current rates proceed from strong peaked interband Berry curvature dipole distributions (arising texturing TBG heterostructures). Strikingly, find displays pronounced responses THz regime tuned chemical potential. These render useful photocurrent probe symmetry breaking make promising material for technology.